JPH0530307B2 - - Google Patents
Info
- Publication number
- JPH0530307B2 JPH0530307B2 JP61148605A JP14860586A JPH0530307B2 JP H0530307 B2 JPH0530307 B2 JP H0530307B2 JP 61148605 A JP61148605 A JP 61148605A JP 14860586 A JP14860586 A JP 14860586A JP H0530307 B2 JPH0530307 B2 JP H0530307B2
- Authority
- JP
- Japan
- Prior art keywords
- groove
- insulating film
- conductive material
- film
- polycrystalline silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 32
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 28
- 239000004020 conductor Substances 0.000 claims description 24
- 239000004065 semiconductor Substances 0.000 claims description 19
- 238000005530 etching Methods 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 239000012535 impurity Substances 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 4
- 230000001590 oxidative effect Effects 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 229910021332 silicide Inorganic materials 0.000 claims description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 2
- 239000003990 capacitor Substances 0.000 description 20
- 239000010410 layer Substances 0.000 description 11
- 239000000463 material Substances 0.000 description 11
- 238000009792 diffusion process Methods 0.000 description 9
- 239000011229 interlayer Substances 0.000 description 8
- 238000001020 plasma etching Methods 0.000 description 8
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- CWNLQDWRSCZYHS-UHFFFAOYSA-N O[Si](O)(O)O.[AsH3] Chemical compound O[Si](O)(O)O.[AsH3] CWNLQDWRSCZYHS-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 239000005368 silicate glass Substances 0.000 description 2
- 238000000992 sputter etching Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61148605A JPS634664A (ja) | 1986-06-25 | 1986-06-25 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61148605A JPS634664A (ja) | 1986-06-25 | 1986-06-25 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS634664A JPS634664A (ja) | 1988-01-09 |
| JPH0530307B2 true JPH0530307B2 (en]) | 1993-05-07 |
Family
ID=15456508
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61148605A Granted JPS634664A (ja) | 1986-06-25 | 1986-06-25 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS634664A (en]) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2740808B2 (ja) * | 1987-06-30 | 1998-04-15 | 三菱電機株式会社 | 半導体装置とその製造方法 |
-
1986
- 1986-06-25 JP JP61148605A patent/JPS634664A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS634664A (ja) | 1988-01-09 |
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